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| e PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 915-960 MHz Class AB Characteristics 50% Typ Collector Efficiency at 6 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 12 10 8 6 4 2 0 0.00 Output Power (Watts) VCC = 25 V ICQ = 50 mA f = 960 MHz 20 LO TC O 14 DE 4 0.25 0.50 0.75 1.00 1.25 Input Power (Watts) Package 20208 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) Tstg RJC Symbol VCER VCBO VEBO IC PD Value 55 60 4.0 1.7 22 0.125 -40 to +150 8 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20144 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 24 60 3.5 20 Typ 30 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 6 W, ICQ = 50 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 6 W, ICQ = 50 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 6 W, ICQ = 50 mA, f = 960 MHz--all phase angles at frequency of test) Symbol Gpe C Min 9 -- -- Typ 10 50 -- Max -- -- 30:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 6 W, ICQ = 50 mA) Z Source Z Load Frequency MHz 915 960 R 2.5 2.6 Z Source jX -1.4 -0.8 R 6.3 7.0 Z Load jX 9.8 12.4 2 e Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 11 10 Gain 80 70 60 Efficiency 50 PTB 20144 9 8 7 6 5 900 VCC = 25 V ICQ = 50 mA Pout = 6 W 915 930 945 960 40 30 20 975 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20144 Uen Rev. D 09-28-98 3 Efficiency (%) Gain (dB) |
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